The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jan. 19, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yusuke Otake, Kanagawa, JP;

Toshifumi Wakano, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01);
Abstract

The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.


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