The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Dec. 22, 2021
Sharp Kabushiki Kaisha, Sakai, JP;
Hitoshi Takahata, Sakai, JP;
Tetsuo Kikuchi, Sakai, JP;
Kengo Hara, Sakai, JP;
Setsuji Nishimiya, Sakai, JP;
Masahiko Suzuki, Sakai, JP;
Tohru Daitoh, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
An active matrix substrate includes a first TFT having an oxide semiconductor layer formed from a first oxide semiconductor film and a second TFT having an oxide semiconductor layer formed from a second oxide semiconductor film. The oxide semiconductor layer of each TFT includes a high-resistance region including a channel region and offset regions and low-resistance regions including a source contact region, a drain contact region, and interposed regions. The first TFT has a gate insulating layer including a first insulating film and a second insulating film. The second TFT has a gate insulating layer including the second insulating film but not including the first insulating film. A total length Lof the offset regions of the first TFT in a channel length direction is greater than a total length Lof the offset regions of the second TFT in the channel length direction.