The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jul. 09, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kwangwuk Park, Seoul, KR;
Youngmin Lee, Hwaseong-si, KR;
Hyoungyol Mun, Yongin-si, KR;
Inyoung Lee, Yongin-si, KR;
Seokhwan Jeong, Suwon-si, KR;
Sungdong Cho, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device, includes: a substrate having a first surface on which a plurality of devices are disposed and a second surface, opposite to the first surface; an interlayer insulating film on the first surface of the substrate; an etching delay layer disposed in a region between the substrate and the interlayer insulating film; first and second landing pads on the interlayer insulating film; a first through electrode penetrating through the substrate and the interlayer insulating film; and a second through electrode penetrating the substrate, the etching delay layer, and the interlayer insulating film, the second through electrode having a width, greater than that of the first through electrode, wherein each of the first and second through electrodes includes first and second tapered end portions in the interlayer insulating film, each of first and second tapered end portions having a cross-sectional shape narrowing closer to the landing pads.