The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Feb. 02, 2022
Applicants:

Denso Corporation, Kariya, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Mirise Technologies Corporation, Nisshin, JP;

Inventor:

Tetsuya Yamada, Nisshin, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/544 (2006.01); H01L 21/477 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); H01L 21/265 (2013.01); H01L 21/477 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A method for manufacturing a semiconductor device, includes: forming an alignment mark in a non-element region of a gallium-based compound semiconductor layer; and, after the forming of the alignment mark, forming an element structure in an element region of the gallium-based compound semiconductor layer. The forming of the alignment mark further includes: ion-implanting a metal into a part of a surface layer portion of the non-element region of the gallium-based compound semiconductor layer; and annealing the gallium-based compound semiconductor layer.


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