The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jun. 30, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Gil Bok Choi, Icheon-si, KR;

Dae Hwan Yun, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 7/10 (2006.01); G11C 11/4096 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 7/1063 (2013.01); G11C 11/4074 (2013.01); G11C 11/4096 (2013.01);
Abstract

The present disclosure relates to an electronic device. A memory device according to the present disclosure includes a memory block coupled to a plurality of local word lines, a peripheral circuit configured to couple the plurality of local word lines to a plurality of global word lines and configured to perform an operation on the memory block, and a control logic configured to control the peripheral circuit to cause or increase a leakage current of the pass switch circuit to discharge potential levels of the plurality of local word lines when the memory device enters a ready state after the operation.


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Choi, Gil. (2023). Memory device performing read operation and operating method of the memory device (U.S. Patent No. 11790979). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11790979

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