The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Feb. 25, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Ho Youn Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 11/07 (2006.01); H03K 19/21 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/0619 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 11/0772 (2013.01); H03K 19/21 (2013.01);
Abstract

A memory device includes; a memory module including a memory array, and a memory controller that retrieves read data from memory cells of the memory array. The memory controller includes a fault detector that detects faulty addresses associated with faulty memory cells among the memory cells providing data errors. The fault detector includes; a first inverter that generates inverted read data by reading and inverting the read data, wherein the inverted read data is stored in the memory array, a first buffer that stores the read data and provides buffered data, an XOR operator that receives the buffered data from the first buffer, receives read-out inverted data generated by reading the inverted read data stored in the memory array, and performs an XOR operation on the buffered data and the read-out inverted read data to generate calculation data, a fault address detection unit that identifies the faulty addresses in response to the calculation data and generates faulty address information, a second inverter that generates inverted read-out inverted read data by receiving and inverting the read-out inverted read data, and an error pattern change unit that converts an uncorrectable error (UE)-causing data into a correctable error (CE)-causing data.


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