The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Sep. 01, 2020
Applicant:

Beijing Voyager Technology Co., Ltd., Beijing, CN;

Inventors:

Sergio Fabian Almeida Loya, Mountain View, CA (US);

Zuow-Zun Chen, Mountain View, CA (US);

Qin Zhou, Livermore, CA (US);

Youmin Wang, Mountain View, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 26/08 (2006.01); G01R 27/26 (2006.01); G02B 26/10 (2006.01); G01S 17/931 (2020.01); G01S 7/481 (2006.01);
U.S. Cl.
CPC ...
G02B 26/0841 (2013.01); G01R 27/2605 (2013.01); G01S 7/4817 (2013.01); G01S 17/931 (2020.01); G02B 26/101 (2013.01);
Abstract

According to certain embodiments, a micro-electromechanical system (MEMS) apparatus has a MEMS mirror structure with a rotatable mirror. Rotation of the mirror produces a change in a measured capacitance corresponding to an angle of rotation. The MEMS structure sits on an oxide layer deposited on a substrate. There is a parasitic capacitance between the MEMS mirror structure and the substrate. An added capacitance is provided between the substrate and a DC voltage source. The added capacitance is much larger than the parasitic capacitance, and shunts the parasitic capacitance to ground to minimize its effect on the measured capacitance.


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