The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Aug. 23, 2021
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Gilles Gasiot, Seyssinet-Pariset, FR;
Fady Abouzeid, La Terrasse, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 27/07 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
G01T 1/248 (2013.01); G01T 1/247 (2013.01); H01L 27/0761 (2013.01); H01L 31/103 (2013.01);
Abstract
A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.