logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11788002 B1

PDFFull Text
Date of Patent:
Oct. 17, 2023

Filed:

Nov. 13, 2020

Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors

Applicant:

University of Chicago, Chicago, IL (US);

Inventors:

Luping Yu, Chicago, IL (US);

Mohammad A. Awais, Chicago, IL (US);

Valerii Sharapov, Chicago, IL (US);

Dafei Yuan, Chicago, IL (US);

Assignee:

THE UNIVERSITY OF CHICAGO, Chicago, IL (US);

Attorney:

Armstrong Teasdale LLP

Primary Examiner:

Vu A Nguyen

Int. Cl.
CPC ...
C09K 11/07 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01); H10K 85/60 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01);
U.S. Cl.
CPC ...
C09K 11/07 (2013.01); H10K 85/615 (2023.02); H10K 85/6572 (2023.02); C09K 2211/104 (2013.01); C09K 2211/1011 (2013.01); H10K 50/16 (2023.02); H10K 50/171 (2023.02);
Abstract

Materials are provided for use as active emissive layers in organic electronic devices such as light-emitting filed effect transistors. Light-emitting transistors (LET) are an alternative to light-emitting diodes and have several important benefits, however, materials developed specifically for LET are quite scarce. Herein a new family of materials is disclosed that has been developed specifically for LET.

Find Patent Forward Citations

Yu, Luping. (2023). Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors (U.S. Patent No. 11788002). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11788002

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…