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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11787965 B1

PDFFull Text
Date of Patent:
Oct. 17, 2023

Filed:

Mar. 29, 2018

Ink composition for forming an organic layer of a semiconductor

Applicant:

Novaled Gmbh, Dresden, DE;

Inventors:

Kay Lederer, Dresden, DE;

Steffen Runge, Dresden, DE;

Jerome Ganier, Dresden, DE;

Anke Limbach, Dresden, DE;

Assignee:

Novaled GmbH, Dresden, DE;

Attorney:

Eversheds Sutherland (US) LLP

Primary Examiner:

Sheng-Bai Zhu

Int. Cl.
CPC ...
C09D 11/52 (2014.01); C09D 11/102 (2014.01); C09D 11/38 (2014.01); H01L 27/30 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01); H10K 39/10 (2023.01); H10K 59/122 (2023.01); H10K 59/173 (2023.01); H10K 85/60 (2023.01); H10K 85/10 (2023.01); H10K 85/30 (2023.01); H10K 50/11 (2023.01); H10K 50/17 (2023.01); H10K 50/155 (2023.01); H10K 71/13 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
C09D 11/52 (2013.01); C09D 11/102 (2013.01); C09D 11/38 (2013.01); H10K 39/10 (2023.02); H10K 59/122 (2023.02); H10K 59/173 (2023.02); H10K 85/115 (2023.02); H10K 85/151 (2023.02); H10K 85/341 (2023.02); H10K 85/60 (2023.02); H10K 85/615 (2023.02); H10K 50/11 (2023.02); H10K 50/155 (2023.02); H10K 50/17 (2023.02); H10K 71/135 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02); H10K 2102/361 (2023.02);
Abstract

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ≥1 to about ≤3 nitrile groups and a melting point of about <100° C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

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