The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

May. 03, 2018
Applicant:

Hamilton Sundstrand Corporation, Charlotte, NC (US);

Inventors:

Sameh Dardona, South Windsor, CT (US);

Paul Sheedy, Bolton, CT (US);

Assignee:

HAMILTON SUNDSTRAND CORPORATION, Charlotte, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B22F 12/00 (2021.01); B33Y 10/00 (2015.01); B33Y 70/00 (2020.01); B33Y 30/00 (2015.01); B33Y 80/00 (2015.01); B05D 3/06 (2006.01); H05K 3/12 (2006.01); B05D 1/26 (2006.01); H05K 1/09 (2006.01); B05D 1/38 (2006.01); B05D 5/12 (2006.01); B05D 3/02 (2006.01);
U.S. Cl.
CPC ...
B22F 12/00 (2021.01); B33Y 10/00 (2014.12); B33Y 30/00 (2014.12); B33Y 70/00 (2014.12); B33Y 80/00 (2014.12); B05D 1/26 (2013.01); B05D 1/38 (2013.01); B05D 3/0254 (2013.01); B05D 3/065 (2013.01); B05D 5/12 (2013.01); H05K 1/092 (2013.01); H05K 3/12 (2013.01); H05K 3/125 (2013.01); H05K 3/1208 (2013.01); H05K 3/1241 (2013.01); H05K 3/1283 (2013.01);
Abstract

An embodiment of a method includes depositing a quantity of first intermediary material onto an electrically insulating substrate in a pattern corresponding to a desired pattern of a first conductive structure. The first intermediary material is adhered to the substrate to form a first intermediate layer to maintain the desired pattern of the first conductive structure. A quantity of a precursor of electrically conductive material is deposited generally along the pattern of the first intermediate layer. Energy is applied to enable migration and consolidation of the first electrically conductive material along the pattern of the first intermediate layer, forming a functional, electrically conductive top layer. At least one of the first electrically conductive material and its precursor has a wetting angle of less than 90° relative to the first intermediate layer, and a wetting angle greater than 90° relative to the substrate. At least one of the depositing steps is an additive deposition step.


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