The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Jun. 30, 2022
Applicant:

Analog Devices International Unlimited Company, Limerick, IE;

Inventors:

Javier A. Salcedo, North Billerica, MA (US);

Srivatsan Parthasarathy, Acton, MA (US);

Enrique C. Bosch, Alginet, ES;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H02H 11/00 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 29/0834 (2013.01); H01L 29/0839 (2013.01); H01L 29/7391 (2013.01); H02H 11/002 (2013.01);
Abstract

Electrical overstress protection for high speed interfaces are disclosed. In certain embodiments, a semiconductor die with bidirectional protection against electrical overstress is provided. The semiconductor die includes a first pad, a second pad, a forward protection silicon controlled rectifier (SCR) electrically connected between the first pad and the second pad and configured to activate in response to electrical overstress that increases a voltage of the first pad relative to a voltage of the second pad, and a reverse protection SCR electrically connected in parallel with the forward protection SCR between the first pad and the second pad and configured to activate in response to electrical overstress that decreases the voltage of the first pad relative to the voltage of the second pad.


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