The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

May. 09, 2022
Applicant:

Marvell Asia Pte Ltd., Singapore, SG;

Inventors:

Radhakrishnan L. Nagarajan, Santa Clara, CA (US);

Masaki Kato, Palo Alto, CA (US);

Nourhan Eid, Santa Clara, CA (US);

Kenneth Ling Wong, Santa Clara, CA (US);

Assignee:

MARVELL ASIA PTE LTD, Singapore, SG;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/0687 (2006.01); H01S 5/343 (2006.01); H01S 5/40 (2006.01); H01S 5/10 (2021.01); H01S 5/06 (2006.01); H01S 5/028 (2006.01); H01S 5/026 (2006.01); H01S 5/02 (2006.01); H01S 5/14 (2006.01); H01S 5/0234 (2021.01); H01S 5/02326 (2021.01); H01S 5/065 (2006.01); H01S 5/0625 (2006.01); H01S 5/0238 (2021.01);
U.S. Cl.
CPC ...
H01S 5/0687 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/028 (2013.01); H01S 5/0234 (2021.01); H01S 5/0238 (2021.01); H01S 5/0261 (2013.01); H01S 5/0287 (2013.01); H01S 5/02326 (2021.01); H01S 5/0612 (2013.01); H01S 5/0656 (2013.01); H01S 5/06256 (2013.01); H01S 5/1007 (2013.01); H01S 5/1021 (2013.01); H01S 5/1025 (2013.01); H01S 5/1042 (2013.01); H01S 5/142 (2013.01); H01S 5/34306 (2013.01); H01S 5/40 (2013.01); H01S 5/4006 (2013.01);
Abstract

A tunable laser for a transceiver includes a silicon photonics substrate, first and second patterned regions each being defined in the substrate a step lower than a flat surface region of the substrate, first and second laser diode chips arranged in the first and second patterned regions, the patterned regions being configured to align the gain regions of the first and second laser diode chips with integrated couplers formed in the substrate adjacent to the first and second patterned regions to facilitate flip-bonding the first and second laser diode chips within the patterned regions, and a tuning filter coupled to the first laser diode chip and the second laser diode chip via the integrated couplers. The tuning filter is configured to receive laser light from each of the first and second laser diode chips and generate a laser output having a gain determined by each of the gain regions.


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