The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Sep. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngjin Choi, Seoul, KR;

Joosung Kim, Seongnam-si, KR;

Jonguk Seo, Suwon-si, KR;

Sungjin Ahn, Hwaseong-si, KR;

Donggun Lee, Hwaseong-si, KR;

Jeongwook Lee, Yongin-si, KR;

Yongseok Choi, Suwon-si, KR;

Youngjo Tak, Suwon-si, KR;

Jonghoon Ha, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/42 (2010.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 27/156 (2013.01); H01L 33/387 (2013.01); H01L 33/42 (2013.01); H01L 21/0254 (2013.01); H01L 33/12 (2013.01);
Abstract

A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.


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