The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Feb. 08, 2022
Applicants:

3-5 Power Electronics Gmbh, Dresden, DE;

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Volker Dudek, Ettlingen, DE;

Jens Kowalsky, Storkow, DE;

Riteshkumar Bhojani, Chemnitz, DE;

Daniel Fuhrmann, Heilbronn, DE;

Thorsten Wierzkowski, Heilbronn, DE;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/868 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 29/207 (2013.01);
Abstract

A stacked III-V semiconductor diode comprising or consisting of GaAs, with a heavily n-doped cathode layer, a heavily p-doped anode layer, and a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8·10cm, and a layer thickness of at least 10 μm, wherein the cathode layer has a delta layer section with a layer thickness of 0.1 μm to 2 μm and a dopant concentration of at least 1·10cm.


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