The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Nov. 12, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kazuyuki Ito, Kamakura, JP;
Takuo Kikuchi, Kamakura, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes first and second electrodes, a gate electrode, first to third semiconductor regions, and first and second insulating parts. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The first insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The gate electrode is located in the first insulating part. The gate electrode faces the second semiconductor region. The second insulating part is located on the third semiconductor region. The second insulating part is not overlapping the gate electrode. The second insulating part has tensile stress. The second electrode is located on the second insulating part and electrically connected with the third semiconductor region.