The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Dec. 27, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Kosuke Uchida, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Abstract
A first main surface of a silicon carbide substrate is provided with a first trench and a second trench. The first trench is defined by a first side surface and a first bottom surface. The second trench is defined by a second side surface and a second bottom surface. The silicon carbide substrate includes a first impurity region, a second impurity region, a third impurity region, and a fourth impurity region. A first insulating film is in contact with each of the first side surface and the first bottom surface. A gate electrode is provided on the first insulating film. A second insulating film is in contact with each of the second side surface and the second bottom surface. The second impurity region has a connection region electrically connected to the fourth impurity region and extending toward the fourth impurity region along the second side surface.