The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
May. 10, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jungmin Park, Seoul, KR;
Hanjin Lim, Seoul, KR;
Haeryong Kim, Seongnam-si, KR;
Younglim Park, Anyang-si, KR;
Cheoljin Cho, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device including a first electrode layer including a first metal and having a first thermal expansion coefficient; a dielectric layer on the first electrode layer, the dielectric layer including a second metal oxide including a second metal that is different from the first metal, and having a second thermal expansion coefficient that is less than the first thermal expansion coefficient; and a first stress buffer layer between the first electrode layer and the dielectric layer, the first stress buffer layer including a first metal oxide including the first metal, and being formed due to thermal stress of the first electrode layer and thermal stress of the dielectric layer.