The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Jun. 16, 2021
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Masahiro Tada, Tokyo, JP;

Makoto Uchida, Tokyo, JP;

Takashi Nakamura, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/105 (2006.01); G06V 40/13 (2022.01);
U.S. Cl.
CPC ...
H01L 27/14678 (2013.01); G06V 40/1318 (2022.01); H01L 27/1461 (2013.01); H01L 27/14616 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); H01L 31/03682 (2013.01); H01L 31/03762 (2013.01); H01L 31/105 (2013.01);
Abstract

A detection device comprising: an insulating substrate; a plurality of gate lines that are provided on the insulating substrate, and extend in a first direction; a plurality of signal lines that are provided on the insulating substrate, and extend in a second direction intersecting the first direction; a switching element coupled to each of the gate lines and each of the signal lines; a first photoelectric conversion element that comprises a first semiconductor layer containing amorphous silicon, and is coupled to the switching element; and a second photoelectric conversion element that comprises a second semiconductor layer containing polysilicon, and is coupled to the switching element.


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