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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11784190 B1

PDFFull Text
Date of Patent:
Oct. 10, 2023

Filed:

Mar. 19, 2019

Display apparatus and method of manufacturing the same

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Sewan Son, Yongin-si, KR;

Moosoon Ko, Yongin-si, KR;

Youngwoo Park, Yongin-si, KR;

Jinsung An, Yongin-si, KR;

Minwoo Woo, Yongin-si, KR;

Juwon Yoon, Yongin-si, KR;

Seongjun Lee, Yongin-si, KR;

Wangwoo Lee, Yongin-si, KR;

Jeongsoo Lee, Yongin-si, KR;

Jiseon Lee, Yongin-si, KR;

Deukmyung Ji, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

KILE PARK REED & HOUTTEMAN PLLC

Primary Examiner:

Shaun M Campbell

Assistant Examiner:

Aneta B Cieslewicz

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H10K 59/12 (2023.01); H10K 59/124 (2023.01); H10K 59/121 (2023.01); H01L 29/786 (2006.01); H10K 59/122 (2023.01); H10K 71/00 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01); H10K 59/123 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H10K 59/12 (2023.02); H10K 59/122 (2023.02); H10K 59/124 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 71/00 (2023.02); H01L 27/1214 (2013.01); H01L 29/78603 (2013.01); H10K 50/81 (2023.02); H10K 50/82 (2023.02); H10K 59/123 (2023.02);
Abstract

A display apparatus includes a substrate, a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer, an organic interlayer insulating layer covering the first gate electrode, a first conductive layer on the organic interlayer insulating layer, a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer, and a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole, wherein the first conductive layer contacts the first semiconductor layer through the first contact hole.

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