The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Apr. 19, 2023
Inha University Research and Business Foundation, Incheon, KR;
Hyungjin Kim, Incheon, KR;
Jinwoo Park, Incheon, KR;
Inha University Research and Business Foundation, Incheon, KR;
Abstract
Disclosed is a highly reliable physically unclonable function technology. In a tunneling-based memory device disclosed herein, a conductive layer (e.g., AlO) is stacked on a bottom electrode, an oxide layer (e.g., TiOx) is stacked on the conductive layer, and a top electrode is stacked on the oxide layer. The tunneling-based memory device has a structure of a memristor crossbar array and has a current-voltage characteristic independent of a temperature that is an external environmental variable due to a tunneling mechanism when constructing an unpredictable physically unclonable function (PUF) of hardware as a memory semiconductor array.