The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Apr. 16, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Guangxu Li, Allen, TX (US);

Yiqi Tang, Allen, TX (US);

Rajen Manicon Murugan, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01);
Abstract

A semiconductor package includes a multilayer package substrate including a top layer including a top dielectric layer and a top metal layer providing a top portion of pins on top filled vias, and a bottom layer including a bottom dielectric layer and a bottom metal layer on bottom filled vias that provide externally accessible bottom side contact pads. The top dielectric layer together with the bottom dielectric layer providing electrical isolation between the pins. And integrated circuit (IC) die that comprises a substrate having a semiconductor surface including circuitry, with nodes connected to bond pads with bonding features on the bond pads. An electrically conductive material interconnect provides a connection between the top side contact pads and the bonding features. At least a first pin includes at least one bump stress reduction structure that includes a local physical dimension change of at least 10% in at least one dimension.


Find Patent Forward Citations

Loading…