The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

May. 24, 2021
Applicant:

Akhan Semiconductor, Inc., Gurnee, IL (US);

Inventor:

Adam Khan, San Francisco, CA (US);

Assignee:

AKHAN Semiconductor, Inc., Gurnee, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/16 (2006.01); H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0405 (2013.01); H01L 21/0415 (2013.01); H01L 21/22 (2013.01); H01L 29/1602 (2013.01); H01L 29/6603 (2013.01); H01L 29/868 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.


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