The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Apr. 13, 2021
Denso Corporation, Kariya, JP;
Hamamatsu Photonics K.k., Hamamatsu, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Jun Kojima, Nagoya, JP;
Chiaki Sasaoka, Nagoya, JP;
Shoichi Onda, Nagoya, JP;
Masatake Nagaya, Kariya, JP;
Kazukuni Hara, Kariya, JP;
Daisuke Kawaguchi, Hamamatsu, JP;
DENSO CORPORATION, Kariya, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Abstract
A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.