The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Oct. 22, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Keith Ryan Green, Prosper, TX (US);

Erika Lynn Mazotti, San Martin, CA (US);

William David French, San Jose, CA (US);

Ricky Alan Jackson, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); G01R 33/00 (2006.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01); H10N 52/00 (2023.01);
U.S. Cl.
CPC ...
G01R 33/072 (2013.01); G01R 33/0052 (2013.01); G01R 33/077 (2013.01); H10N 52/01 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02);
Abstract

A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.


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