The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Dec. 15, 2020
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Kuo-Wei Huang, Hsinchu, TW;

Yung-Liang Tung, Hsinchu, TW;

Jung-Pin Chiou, Hsinchu, TW;

Pei-Ting Chiu, Hsinchu, TW;

Shih-Hsiung Wu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/10 (2023.01); C01B 13/18 (2006.01); H10K 85/00 (2023.01);
U.S. Cl.
CPC ...
H10K 30/10 (2023.02); C01B 13/18 (2013.01); H10K 85/00 (2023.02);
Abstract

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.


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