The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Jul. 05, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Changhan Kim, Icheon-si, KR;

In Ku Kang, Icheon-si, KR;

Sun Young Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 27/24 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01); H01L 45/00 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02); H10B 63/845 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02);
Abstract

A semiconductor device includes a stacked structure with insulating layers and conductive layers that are alternately stacked on each other, a hard mask pattern located on the stacked structure, a channel structure penetrating the hard mask pattern and the stacked structure, insulating patterns interposed between the insulating layers and the channel structure, and a memory layer interposed between the stacked structure and the channel structure, wherein the memory layer fills a space between the insulating patterns, wherein a sidewall of each of the conductive layers protrudes farther towards the channel structure than a sidewall of the hard mask pattern, and wherein the insulating patterns protrude farther towards the channel structure than the sidewall of each of the conductive layers.


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