The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jan. 08, 2021
Apple Inc., Cupertino, CA (US);
Giulio Maria Iadicicco, Munich, DE;
Michael Couleur, Rottach-Egern, DE;
Siarhei Meliukh, Munich, DE;
Apple Inc., Cupertino, CA (US);
Abstract
Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.