The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jun. 28, 2018
Oulun Yliopisto, Oulu, FI;
OULUN YLIOPISTO, Oulu, FI;
Abstract
An apparatus is configured to operate in a single fundamental transverse mode and the apparatus includes a waveguide layer between an n-doped cladding layer and a p-doped cladding layer. The waveguide layer includes a first waveguide part, and an active layer located between the first waveguide part and the p-doped cladding layer, the active layer being asymmetrically within the waveguide layer closer to the p-doped cladding layer than the n-doped cladding layer. The refractive index of the n-doped cladding layer being equal to or larger than the p-doped cladding layer. A first end of the first waveguide part is adjacent to the n-doped cladding layer. A second end of the first waveguide part is adjacent to a first end of the active layer. A desired donor density is doped in the first waveguide part for controlling the carrier density dependent internal optical loss in the first waveguide part at high injection levels.