The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Oct. 04, 2021
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Takuo Hiratani, Osaka, JP;

Hideki Yagi, Osaka, JP;

Naoki Fujiwara, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/10 (2021.01); H01S 5/125 (2006.01); H01S 5/12 (2021.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1003 (2013.01); H01S 5/021 (2013.01); H01S 5/101 (2013.01); H01S 5/1032 (2013.01); H01S 5/125 (2013.01); H01S 5/1209 (2013.01); H01S 5/1014 (2013.01); H01S 5/1228 (2013.01);
Abstract

A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.


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