The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Dec. 04, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhee Choi, Seongnam-si, KR;

Nakhyun Kim, Yongin-si, KR;

Jinjoo Park, Yongin-si, KR;

Joohun Han, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 27/156 (2013.01); H01L 33/0025 (2013.01); H01L 33/0062 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/40 (2013.01);
Abstract

Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.


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