The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Feb. 01, 2022
Kaistar Lighting(xiamen) Co., Ltd., Xiamen, CN;
Ben-Jie Fan, Xiamen, CN;
Jing-Qiong Zhang, Xiamen, CN;
Yi-Qun Li, Xiamen, CN;
Hung-Chih Yang, Xiamen, CN;
Tsung-Chieh Lin, Xiamen, CN;
Ho-Chien Chen, Xiamen, CN;
Shuen-Ta Teng, Xiamen, CN;
Cheng-Chang Hsieh, Xiamen, CN;
KAISTAR LIGHTING(XIAMEN) CO., LTD., Xiamen, CN;
Abstract
A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile