The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Dec. 03, 2021
Applicant:

Solarlab Aiko Europe Gmbh, Freiburg, DE;

Inventors:

Kaifu Qiu, Yiwu, CN;

Yongqian Wang, Yiwu, CN;

Xinqiang Yang, Yiwu, CN;

Gang Chen, Yiwu, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/05 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0516 (2013.01); H01L 31/068 (2013.01);
Abstract

A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.


Find Patent Forward Citations

Qiu, Kaifu. (2023). Back contact structure and selective contact region buried solar cell comprising the same (U.S. Patent No. 11777045). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11777045

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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