The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jan. 13, 2022
Applicant:
Hoon Kim, La Habra, CA (US);
Inventor:
Hoon Kim, La Habra, CA (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035209 (2013.01); H01L 27/14623 (2013.01); H01L 27/14665 (2013.01); H01L 31/103 (2013.01);
Abstract
A photodetector includes a metal layer that shields incident light and generates surface plasmon polaritons (SPPs), a light absorbing layer that absorbs the generated SPPs and allows charges excited by the absorbed SPPs and a localized electric field effect to tunnel, a dielectric formed at nanoholes in which at least a part of the metal layer is opened, and a semiconductor layer that induces the photocurrent based on an electric field effect of tunneled electrons. The SPPs form localized surface plasmons (LSPs) at an interface where the metal layer meets the dielectric.