The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Aug. 23, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kazuya Konishi, Tokyo, JP;

Koichi Nishi, Tokyo, JP;

Tetsuya Nitta, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/1095 (2013.01);
Abstract

A semiconductor device includes: a carrier stored layer; an upper-stage active portion disposed on a first insulating film along an inner wall of an upper portion of a trench penetrating the carrier stored layer, the upper-stage active portion being upper-stage polysilicon connected to a gate electrode; and lower-stage polysilicon disposed on a second insulating film along an inner wall of a lower portion of the trench, the lower-stage polysilicon provided with a third insulating film disposed between the upper-stage active portion and the lower-stage polysilicon. The lower end of the upper-stage active portion is positioned below the lower end of the carrier stored layer.


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