The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
May. 19, 2021
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H10B 41/70 (2023.01); H01L 21/28 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 29/0673 (2013.01); H01L 29/40114 (2019.08); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/66969 (2013.01); H01L 29/775 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/7883 (2013.01); H01L 29/78696 (2013.01); H10B 41/70 (2023.02);
Abstract
A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.