The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Nov. 29, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Egle Tylaite, Munich, DE;

Joost Adriaan Willemen, Munich, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/74 (2006.01); H01L 29/735 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/735 (2013.01); H01L 29/7436 (2013.01); H01L 29/868 (2013.01); H01L 29/8611 (2013.01);
Abstract

An ESD protection device includes a semiconductor body having an upper surface, a plurality of p-type wells that each extend from the upper surface into the semiconductor body, a plurality of n-type wells that each extend from the upper surface into the semiconductor body, first isolation regions comprising an electrical insulator that laterally surrounds the p-type wells and extends from the upper surface into the semiconductor body at least as deep as the p-type wells, and second isolation regions comprising an electrical insulator that laterally surrounds the n-type wells and extends from the upper surface into the semiconductor body at least as deep as the n-type wells, wherein the p-type wells and the n-type wells alternate with one another a first direction, and wherein an isolating area of the first isolation regions is greater than an isolating area of the second isolation regions.


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