The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
May. 02, 2022
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Alexis Gauthier, Meylan, FR;
Pascal Chevalier, Chapareillan, FR;
Gregory Avenier, Saint Nazaire les Eymes, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8222 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0642 (2013.01); H01L 21/8222 (2013.01); H01L 29/6634 (2013.01); H01L 29/7322 (2013.01);
Abstract
A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.