The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Feb. 14, 2022
Honda Motor Co., Ltd., Tokyo, JP;
Yasuhiro Maeda, Saitama, JP;
Yoshinari Tsukada, Saitama, JP;
Shinya Maita, Saitama, JP;
Genki Nakamura, Saitama, JP;
Yuki Negoro, Saitama, JP;
HONDA MOTOR CO., LTD., Tokyo, JP;
Abstract
Provided is an n-channel BiMOS semiconductor device having a trench gate structure, the n-channel BiMOS semiconductor device including: an ndrain layer; a parallel pn layer including ndrift and p pillar layers joined alternately; a composite layer including a p base layer and an nsource layer, the ndrain layer, the parallel pn layer, and the composite layer being provided in order; a high-resistance layer provided between a portion of the p base layer above the p pillar layer and the nsource layer; and a high-resistance layer provided between the p pillar layer and the p base layer, the p pillar layer having an impurity concentration lower than that of the ndrift layer.