The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Aug. 24, 2020
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Tomohiro Iguchi, Himeji Hyogo, JP;

Tatsuya Hirakawa, Takasago Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/04 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49861 (2013.01); H01L 23/041 (2013.01); H01L 23/3121 (2013.01); H01L 23/49811 (2013.01);
Abstract

A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.


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