The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Aug. 19, 2020
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Teiji Yamamoto, Nagaokakyo, JP;

Masayuki Aoike, Nagaokakyo, JP;

Hiroyuki Nagai, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 21/568 (2013.01); H01L 23/3135 (2013.01); H01L 23/49827 (2013.01); H01L 23/66 (2013.01); H01L 24/13 (2013.01); H01L 25/0652 (2013.01); H01L 2223/6644 (2013.01);
Abstract

A semiconductor device and a method for manufacturing a semiconductor device that enable characteristics to be improved are provided. A semiconductor device includes a substrate that has a first surface and a second surface that is located opposite the first surface, a first element that is disposed on the first surface, and a first resin layer that is disposed on the first surface and that is disposed around the first element in a plan view. The substrate includes a wiring layer. The first element includes a semiconductor layer, an electrode portion that is located on a surface of the semiconductor layer facing the substrate, and an insulating layer that is located opposite the electrode portion with the semiconductor layer interposed therebetween. The electrode portion is connected to the wiring layer. A height of the first resin layer from the first surface is more than a height of the first element from the first surface.


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