The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Oct. 27, 2021
Sandisk Technologies Llc, Addison, TX (US);
Kei Kitamura, Kanagawa, JP;
Yuki Fujita, Kanagawa, JP;
Kyosuke Matsumoto, Kanagawa, JP;
Masahiro Kano, Kanagawa, JP;
Minoru Yamashita, Kanagawa, JP;
Ryuji Yamashita, Tokyo, JP;
Shuzo Otsuka, Kanagawa, JP;
SanDisk Technologies LLC, Addison, TX (US);
Abstract
A method for programming a non-volatile memory structure, comprises initiating a two-dimensional fractional number of bits-per-cell programming scheme of a plurality of memory cells, wherein the memory structure comprises: (1) a first memory array comprising a first population of memory cells and the associated peripheral circuitry disposed below the first population of cells, (2) a second memory array positioned above the first memory array and comprising a second population of memory cells and associated peripheral circuitry disposed above the second population of cells, and (3) a data bus tap electrically coupling the first and second memory arrays. Further, the method comprises: (1) storing input data in data latches associated with the first array and with the second array. Additionally, the method comprises converting the stored data using data conversion logic implemented by a data path circuit of the first and second arrays and rewriting the converted data to the latches.