The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jun. 16, 2021
Kioxia Corporation, Tokyo, JP;
SK Hynix Inc., Icheon-si, KR;
Kioxia Corporation, Tokyo, JP;
SK HYNIX INC., Gyeonggi-Do, KR;
Abstract
A magnetoresistance memory device includes; first and second switching elements; first and second layer stacks respectively on the first and second switching elements; a first insulator on a side surface of the first layer stack; and a second insulator on a side surface of the second layer stack. Each of the first and second switching elements includes a variable resistance material. Each of the first and second layer stacks includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A narrowest interval between the first and second insulators is narrower than a narrowest interval between the first and second switching elements.