The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Apr. 09, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jitsuo Ota, Suwon-si, KR;

Jihoon Kang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01); G09G 3/32 (2016.01); H01L 25/075 (2006.01); H01L 27/12 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
G09G 3/2007 (2013.01); G09G 3/32 (2013.01); H01L 25/0753 (2013.01); H01L 27/1214 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); G09G 2330/10 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

The disclosure relates to a light emitting diode (LED) that is capable of emitting a plurality of lights having different wavelengths from one another, and independently controlling the intensity of the plurality of emitted lights and a manufacturing method of the LED, and a display device including the LED. Specifically, an LED according to the disclosure includes a first light emitting cell including an n-type semiconductor layer, a p-type semiconductor layer, and a first light emitting layer which respectively include at least one non-planar area, the first light emitting layer emitting a light of a first wavelength, a second light emitting cell including an n-type semiconductor layer, a p-type semiconductor layer, and a second light emitting layer which respectively consist of a planar area, the second light emitting layer emitting a light of a second wavelength different from the first wavelength of the light emitted from the first light emitting layer, a common electrode commonly connected with the first light emitting cell and the second light emitting cell, and a first pixel electrode and a second pixel electrode independently connected with each of the first light emitting cell and the second light emitting cell.


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