The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jul. 15, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Youngdeok Seo, Seoul, KR;
Jinyoung Kim, Seoul, KR;
Sehwan Park, Yongin-si, KR;
Dongmin Shin, Seoul, KR;
Woohyun Kang, Hwaseong-si, KR;
Shinho Oh, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.