The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Apr. 12, 2019
Applicant:

Sanyo Chemical Industries, Ltd., Kyoto, JP;

Inventors:

Masaru Honda, Kyoto, JP;

Satoshi Yamada, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03G 9/087 (2006.01); G03G 9/08 (2006.01); C08F 220/18 (2006.01); C08F 212/10 (2006.01); C08G 63/195 (2006.01);
U.S. Cl.
CPC ...
G03G 9/08711 (2013.01); C08F 212/10 (2013.01); C08F 220/1818 (2020.02); C08G 63/195 (2013.01); G03G 9/0821 (2013.01); G03G 9/08755 (2013.01); G03G 9/08795 (2013.01); G03G 9/08797 (2013.01);
Abstract

An object of the present invention is to provide a toner binder that maintains low-temperature fixability and hot offset resistance while having excellent grindability, image strength, heat-resistant storage stability, electrostatic charge stability, gloss-imparting properties, and durability. The toner binder of the present invention contains an amorphous resin (A) and a crystalline vinyl resin (B), wherein a weight ratio [(A)/(B)] of the amorphous resin (A) to the crystalline vinyl resin (B) is 81/19 to 97/3, the toner binder has an endothermic peak top temperature (Tm) derived from the crystalline vinyl resin (B) of 40° C. to 100° C. and a half-width of the endothermic peak derived from the crystalline vinyl resin (B) of 6° C. or less, the crystalline vinyl resin (B) has an acid value of 60 mg KOH/g or less, and the toner binder satisfies the following relation (1): 3° C.≤Tfb(A)−Tfb(C)≤30° C.


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