The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Dec. 09, 2020
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Shohei Hayashi, Hamamatsu, JP;

Tetsushi Shimomura, Hamamatsu, JP;

Hiroyasu Fujiwara, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 5/18 (2006.01); G02F 1/39 (2006.01); G02B 27/00 (2006.01); G02B 3/08 (2006.01);
U.S. Cl.
CPC ...
G02B 5/1871 (2013.01); G02B 5/1809 (2013.01); G02B 5/1857 (2013.01); G02B 5/1876 (2013.01); G02B 27/0025 (2013.01); G02F 1/39 (2013.01); G02B 3/08 (2013.01); G02F 2203/13 (2013.01);
Abstract

A terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of holes that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of holes are arranged. A height of the hole in a thickness direction of the substrate and a width of the pillar differ for each of the regions. Outer end portions of the uneven structure in the thickness direction are located on the same plane.


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