The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Dec. 08, 2020
Applicant:

Semes Co., Ltd., Cheonan-si, KR;

Inventors:

Won Geun Kim, Goyang-si, KR;

Tae Shin Kim, Suwon-si, KR;

Assignee:

SEMES CO., LTD., Cheonan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/362 (2014.01); H01L 21/263 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 26/362 (2013.01); H01L 21/2633 (2013.01); B23K 2101/40 (2018.08);
Abstract

A thin layer etching apparatus includes an etchant supply unit configured to supply an etchant onto a substrate to etch a thin layer formed on the substrate, a temperature measuring unit configured to measure a temperature of the substrate while an etching process is performed by the etchant, a laser irradiating unit configured to irradiate a first laser beam on a first portion including a central portion of the substrate and to irradiate a second laser beam in a ring shape on a second portion surrounding the first portion so that the temperature of the substrate is maintained at a predetermined temperature during the etching process, and a process control unit configured to control power of the first and second laser beams based on the temperature of the substrate measured by the temperature measuring unit to reduce a temperature difference between the first and second portions of the substrate.


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