The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Mar. 25, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tae Kyung Won, San Jose, CA (US);

Soo Young Choi, Fremont, CA (US);

Sanjay D. Yadav, Morgan Hill, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/56 (2006.01); C23C 16/34 (2006.01); C23C 16/505 (2006.01); H01L 51/52 (2006.01); H10K 71/00 (2023.01); H10K 50/844 (2023.01); H10K 59/124 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); C23C 16/345 (2013.01); C23C 16/505 (2013.01); H10K 50/8445 (2023.02); H10K 50/844 (2023.02); H10K 59/124 (2023.02);
Abstract

A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 10cmwhen an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 10cm, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.


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