The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Jun. 04, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin A. Kim, Hwaseong-si, KR;

Ho-In Ryu, Suwon-si, KR;

Seong Min Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 21/7682 (2013.01); H01L 23/5329 (2013.01); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H01L 23/53295 (2013.01); H10B 12/485 (2023.02);
Abstract

A semiconductor device includes a semiconductor substrate including a trench, a direct contact in the trench, the direct contact having a width smaller than a width of the trench, a bit line structure on the direct contact, the bit line structure having a width smaller than the width of the trench, a first spacer including a first portion and a second portion, the first portion extending along an entire side surface of the direct contact, and the second portion extending along the trench, a second spacer on the first spacer, the second spacer filling the trench, a third spacer on the second spacer, and an air spacer on the third spacer, the air spacer being spaced apart from the second spacer by the third spacer, wherein the first spacer includes silicon oxide.


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